What Can DP Do too? | How Interstitial Doping Reduces the Coercive Field of Ferroelectric Hafnium Oxide
The research group led by Shi Liu from the Department of Physics, School of Science, Westlake University has made the latest progress in revealing the mechanism by which interstitial doping reduces the coercive field of ferroelectric hafnium oxide. On February 4, the research results were published in Physical Review Letters under the title "Origin of Interstitial Doping Induced Coercive Field Reduction in Ferroelectric Hafnia".
In this study, the research group led by Shi Liu comprehensively used first-principles calculations and deep potential-based molecular dynamics to reveal the relationship between interstitial doping and the coercive field of ferroelectric hafnium oxide (HfO2). It was found that interstitial hafnium doping significantly reduces the energy difference between the polar orthorhombic O phase (space group: Pca21) and the tetragonal T phase, thereby reducing the polarization reversal energy barrier and the coercive field. Compared with the theoretical model proposed in previous studies, which suggested that doping-induced rhombohedral R phase reduces the coercive field, this study proposed that the low-doped O phase can better explain the experimental observations of interstitial-doped hafnium-based thin films. Large-scale molecular dynamics simulations based on deep potential further indicated that interstitial hafnium doping can induce the formation of mobile Pbcn-type domain walls, thus reducing the polarization reversal electric field to less than 1 MV/cm. In addition, first-principles calculations revealed a negative correlation between the polarization reversal energy barrier and the radius of the doped atom, and several potential interstitial doping atoms that can effectively reduce the coercive field were screened out.